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| AO4411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4411 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4411 is Pb-free (meets ROHS & Sony 259 specifications). AO4411L is a Green Product ordering option. AO4411 and AO4411L are electrically identical. Features VDS (V) = -30V ID = -8 A (VGS = -10V) RDS(ON) < 32m (VGS = -10V) RDS(ON) < 55m (VGS = -4.5V) SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 20 -8 -6.6 -40 3 2.1 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 24 54 21 Max 40 75 30 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4411 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, I D=-8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-5A Forward Transconductance VDS=-5V, ID=-8A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C -1.2 -40 24.5 33 41 14.5 -0.76 -1 -4.2 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 122 3.6 18.4 VGS=-10V, VDS=-15V, I D=-8A 9.3 2.7 4.9 7.1 VGS=-10V, VDS=-15V, RL=1.8, RGEN=3 IF=-8A, dI/dt=100A/s IF=-8A, dI/dt=100A/s 3.4 18.9 8.4 21.5 12.5 27 5 23 11.5 1120 55 32 -2 Min -30 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4: Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 20 -ID (A) 15 10 5 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 60 50 45 RDS(ON) (m) 40 35 30 25 20 15 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 70 60 RDS(ON) (m) -IS (A) 50 40 30 25C 20 1.0E-05 10 0 3 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C ID=-7.5A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25C 125C 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-10V Normalized On-Resistance 55 VGS=-4.5V 1.60 ID=-7.5A 1.40 VGS=-10V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -3.5V -6V -5V -4.5V 30 25 -4V -ID(A) 20 15 10 5 125C 25C VDS=-5V 1.20 VGS=-4.5V 1.00 Alpha & Omega Semiconductor, Ltd. AO4411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=-15V ID=-8A Capacitance (pF) 1250 1000 750 500 250 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Ciss Coss Crss 100.0 TJ(Max)=150C, TA=25C 40 10s 100s 30 Power (W) TJ(Max)=150C TA=25C -ID (Amps) 10.0 RDS(ON) limited 0.1s 1ms 10ms 20 1.0 1s 10s DC 10 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 Alpha & Omega Semiconductor, Ltd. |
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